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GAIN CELL EMBEDDED DRAM IN FULLY DEPLETED SILICON-ON-INSULATOR TECHNOLOGY
GAIN CELL EMBEDDED DRAM IN FULLY DEPLETED SILICON-ON-INSULATOR TECHNOLOGY
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机译：完全耗尽型绝缘硅技术中的增益单元嵌入式DRAM
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摘要
An FD-SOI GC-ed RAM gain cell includes: a write bit line terminal connected to a WBL; a read bit line terminal connected to a RBL; a write trigger terminal connected to a WWL, for inputting a write trigger signal; a read trigger terminal put connected to a RWL, for inputting a read trigger signal; at least one body voltage terminal connected to a respective body voltage; and multiple FD-SOI transistors. The FD-SOI transistors are interconnected to form a storage node for retaining a data signal. The bodies of at least two of the transistors are coupled in a single well to a body voltage terminal. The write trigger signal triggers writing an input data signal from the write bit line terminal to the storage node and the read trigger signal triggers outputting the retained data signal from the storage node to the read bit line terminal.
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