首页> 外国专利> THIN-FILM, FLEXIBLE MULTI-JUNCTION OPTOELECTRONIC DEVICES INCORPORATING LATTICE-MATCHED DILUTE NITRIDE JUNCTIONS AND METHODS OF FABRICATION

THIN-FILM, FLEXIBLE MULTI-JUNCTION OPTOELECTRONIC DEVICES INCORPORATING LATTICE-MATCHED DILUTE NITRIDE JUNCTIONS AND METHODS OF FABRICATION

机译:薄膜,柔性多结光电器件,结合了晶格匹配的稀释氮化物结和制造方法

摘要

A multi-junction optoelectronic device and method of fabrication are disclosed. In an aspect, the method includes forming a first p-n structure on a substrate, the first p-n structure including a semiconductor having a lattice constant that matches a lattice constant of the substrate; forming one or more additional p-n structures on the first p-n structure, each of the one or more additional p-n structures including a semiconductor having a lattice constant that matches the lattice constant of the substrate, the semiconductor of a last of the one or more additional p-n structures that is formed including a dilute nitride, and the multi-junction optoelectronic device including the first p-n structure and the one or more additional p-n structures; and separating the multi-junction optoelectronic device from the substrate. In some implementations, it is possible to have the dilute nitride followed by a group IV p-n structure.
机译:公开了一种多结光电器件及其制造方法。在一个方面,该方法包括在衬底上形成第一p-n结构,该第一p-n结构包括半导体,该半导体具有与衬底的晶格常数匹配的晶格常数。在第一pn结构上形成一个或多个附加pn结构,一个或多个附加pn结构中的每一个都包括半导体,该半导体的晶格常数与衬底的晶格常数匹配,一个或多个附加pn的最后一个半导体形成的包括稀氮化物的结构,以及包括第一pn结构和一个或多个附加pn结构的多结光电器件;将多结光电器件与衬底分离。在一些实施方式中,可以使稀氮化物跟随有IV族p-n结构。

著录项

  • 公开/公告号WO2019245619A1

    专利类型

  • 公开/公告日2019-12-26

    原文格式PDF

  • 申请/专利权人 ALTA DEVICES INC.;

    申请/专利号WO2019US23601

  • 发明设计人 JAIN NIKHIL;KAYES BRENDAN M.;HE GANG;

    申请日2019-03-22

  • 分类号H01L31/0687;H01L31/0304;H01L31/18;

  • 国家 WO

  • 入库时间 2022-08-21 11:14:07

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