Suppressing sin removal rates and reducing oxide trench dishing for shallow trench isolation (sti) process

• 1. 对于浅沟槽隔离(STI)工艺抑制SiN去除速率并减少氧化物沟槽凹陷 [P] . 中国专利： CN111117492A . 2020-05-08
• 2. 浅沟槽隔离化学机械平面化抛光中的高氧化物:氮化物选择性、低且均匀的氧化物沟槽凹陷 [P] . 中国专利： CN110951399A . 2020-04-03
• 3. STI SiN Suppressing SiN Removal Rates and Reducing Oxide Trench Dishing for Shallow Trench Isolation STI Process [P] . 韩国专利： KR20200049631A . 2020-05-08

  机译： STI SiN抑制SiN去除速率并减少浅沟槽隔离STI工艺的氧化沟沟槽

• 4. Suppressing SiN Removal Rates And Reducing Oxide Trench Dishing For Shallow Trench Isolation (STI) Process [P] . 美国专利： US2020131404A1 . 2020-04-30

  机译： 抑制SiN去除率并减少浅沟槽隔离（STI）工艺的氧化物沟槽腐蚀

• 5. SUPPRESSING SIN REMOVAL RATES AND REDUCING OXIDE TRENCH DISHING FOR SHALLOW TRENCH ISOLATION (STI) PROCESS [P] . 欧洲知识产权局专利： EP3647384A1 . 2020-05-06

  机译： 抑制罪恶去除率并减少氧化物沟槽的排放，以进行浅沟槽隔离（STI）过程

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• 6. Shallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology [J] . Hu Chan-Yuan, Chen Jone F., Chen Shih-Chih, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures . 2010,第2期
• 7. Effect of Slurry Injection System Position on Removal Rate for Shallow Trench Isolation Chemical Mechanical Planarization Using a Cerium Dioxide Slurry [J] . Bahr Matthew, Sampurno Yasa, Han Ruochen, ECS Journal of Solid State Science and Technology . 2017,第7期
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• 10. Trench Safety–Using a Qualitative Approach to Understand Barriers and Develop Strategies to Improve Trenching Practices [O] . MICHAEL A. FLYNN, JULIE M. SAMPSON -1
• 11. Simulations Analysis of Proposed Structure Characteristics in Shallow Trench Isolation for VLSI [O] . YongJae Lee 2014

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