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Spin-transfer torque memory (STTM) devices having magnetic contacts

机译：具有磁性触点的自旋转移矩存储（STTM）设备

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摘要

Techniques are disclosed for forming integrated circuit structures including a magnetic tunnel junction (MTJ), such as spin-transfer torque memory (STTM) devices, having magnetic contacts. The techniques include incorporating an additional magnetic layer (e.g., a layer that is similar or identical to that of the magnetic contact layer) such that the additional magnetic layer is coupled antiferromagnetically (or in a substantially antiparallel manner). The additional magnetic layer can help balance the magnetic field of the magnetic contact layer to limit parasitic fringing fields that would otherwise be caused by the magnetic contact layer. The additional magnetic layer may be antiferromagnetically coupled to the magnetic contact layer by, for example, including a nonmagnetic spacer layer between the two magnetic layers, thereby creating a synthetic antiferromagnet (SAF). The techniques can benefit, for example, magnetic contacts having magnetic directions that are substantially in-line or substantially in-plane with the layers of the MTJ stack.
机译：公开了用于形成包括具有磁性接触的磁性隧道结（MTJ）的集成电路结构的技术，所述磁性隧道结（MTJ）例如自旋传递扭矩存储器（STTM）器件。该技术包括并入额外的磁性层（例如，与磁性接触层的层相似或相同的层），使得该额外的磁性层反铁磁性地（或以基本上反平行的方式）耦合。附加的磁性层可以帮助平衡磁性接触层的磁场，以限制否则将由磁性接触层引起的寄生边缘场。附加磁性层可以通过例如在两个磁性层之间包括非磁性间隔层而反铁磁性地耦合到磁性接触层，从而产生合成反铁磁性体（SAF）。该技术可以例如受益于具有与MTJ堆叠的层基本在一条直线上或基本在一条平面上的磁方向的磁接触。

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