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High-speed MOSFET and IGBT gate driver

机译:高速MOSFET和IGBT栅极驱动器

摘要

A gate driver integrated circuit drives an output signal onto its output terminal and onto the gate of a power transistor. In a turn-on episode, a digital input signal transitions to a digital logic high level. In response, the gate driver integrated circuit couples the output terminal to a positive supply voltage terminal, thereby driving a positive voltage onto the gate of the power transistor. In response to a high-to-low transition of the digital input signal, the driver drives a negative voltage onto the output terminal and power transistor gate for a short self-timed period of time, and then couples the output terminal to a ground terminal, thereby driving the output terminal and power transistor gate up to ground potential. The output terminal and power transistor gate are then held at ground potential in anticipation of the next turn-on episode of the power transistor.
机译:栅极驱动器集成电路将输出信号驱动到其输出端子上以及功率晶体管的栅极上。在接通事件中,数字输入信号转换为数字逻辑高电平。作为响应,栅极驱动器集成电路将输出端子耦合到正电源电压端子,从而将正电压驱动到功率晶体管的栅极上。响应于数字输入信号的从高到低转换,驱动器在很短的自定时时间内将负电压驱动到输出端子和功率晶体管栅极上,然后将输出端子耦合到接地端子,从而将输出端子和功率晶体管的栅极驱动到地电位。然后,将输出端子和功率晶体管的栅极保持在地电位,以预期功率晶体管的下一个导通。

著录项

  • 公开/公告号US10536145B2

    专利类型

  • 公开/公告日2020-01-14

    原文格式PDF

  • 申请/专利权人 LITTELFUSE INC.;

    申请/专利号US201816116807

  • 发明设计人 ANATOLIY V. TSYRGANOVICH;LEONID A. NEYMAN;

    申请日2018-08-29

  • 分类号H03K19/0185;H03K17/687;H03K3/012;

  • 国家 US

  • 入库时间 2022-08-21 11:28:28

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