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首页> 外文期刊>Power Electronics, IET >Experimental Comparison of High-Speed Gate Driver Design for 1.2-kV/120-A Si IGBT and SiC MOSFET Modules
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Experimental Comparison of High-Speed Gate Driver Design for 1.2-kV/120-A Si IGBT and SiC MOSFET Modules

机译：1.2-kV / 120-A Si IGBT和SiC MOSFET模块的高速栅极驱动器设计的实验比较

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摘要

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) is regarded as an attractive replacement for Si insulated gate bipolar transistor (IGBT) in high-power density applications due to its high switching speed and low switching loss. However, to fully utilise these benefits, the gate driver of the SiC MOSFET needs to be optimised to meet its special driving requirements. Fundamentally, both gate drivers for Si IGBT and SiC MOSFET share similar design methodology since these two power devices have the same MOS-gated structure. However, one of the major challenges in the gate driver design for SiC MOSFET is overcoming the electromagnetic interference, which is resulted from the much higher d/d and d/d ratios during the switching transition. In this study, high-speed gate drivers for Si IGBT and SiC MOSFET power modules of similar ratings of 1.2 kV/120 A have been designed. The performances of gate driver have been experimentally evaluated by a double pulse test. The design considerations of gate driver to enable the replacement of Si IGBT by SiC MOSFET have been conclusively investigated and presented in this study.
机译：碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）由于其高开关速度和低开关损耗而在高功率密度应用中被认为是Si绝缘栅双极晶体管（IGBT）的有吸引力的替代品。但是，为了充分利用这些优势，需要优化SiC MOSFET的栅极驱动器，以满足其特殊的驱动要求。从根本上说，Si IGBT和SiC MOSFET的栅极驱动器都采用相似的设计方法，因为这两个功率器件具有相同的MOS门控结构。但是，SiC MOSFET栅极驱动器设计中的主要挑战之一是克服电磁干扰，这是由于开关转换期间的d / d和d / d比更高。在本研究中，已设计出用于1.2 kV / 120 A相似额定值的Si IGBT和SiC MOSFET功率模块的高速栅极驱动器。栅极驱动器的性能已通过双脉冲测试进行了实验评估。最终研究并提出了能够用SiC MOSFET代替Si IGBT的栅极驱动器的设计注意事项。

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