首页> 外国专利> Method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors integrated in a CMOS SOI wafer

Method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors integrated in a CMOS SOI wafer

机译:利用集成在CMOS SOI晶片中的波导异质结光电晶体管的光电接收器的方法和系统

摘要

A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (HPTs) integrated in a wafer are disclosed and may include receiving optical signals via optical fibers operably coupled to a top surface of the chip. Electrical signals may be generated utilizing HPTs that detect the optical signals. The electrical signals may be amplified via voltage amplifiers, or transimpedance amplifiers, the outputs of which may be utilized to bias the HPTs by a feedback network. The optical signals may be coupled into opposite ends of the HPTs. A collector of the HPTs may comprise a silicon layer and a germanium layer, a base may comprise a silicon germanium alloy with germanium composition ranging from 70% to 100%, and an emitter including crystalline or poly Si or SiGe. The optical signals may be demodulated by communicating a mixer signal to a base terminal of the HPTs.
机译:公开了一种用于利用集成在晶片中的波导异质结光电晶体管(HPT)的光电接收器的方法和系统,该方法和系统可以包括经由可操作地耦合到芯片的顶表面的光纤接收光信号。可以利用检测光信号的HPT生成电信号。可以通过电压放大器或跨阻放大器来放大电信号,其输出可以用于通过反馈网络偏置HPT。光信号可以耦合到HPT的相对端。 HPT的集电极可包括硅层和锗层,基极可包括锗组成为70%至100%的硅锗合金,以及包括晶体或多晶硅或SiGe的发射极。可以通过将混合器信号传送到HPT的基本端子来解调光信号。

著录项

  • 公开/公告号US10560197B2

    专利类型

  • 公开/公告日2020-02-11

    原文格式PDF

  • 申请/专利权人 LUXTERA INC.;

    申请/专利号US201916268774

  • 发明设计人 GIANLORENZO MASINI;SUBAL SAHNI;

    申请日2019-02-06

  • 分类号H04B10/60;G01J1/44;H01L31/0224;H01L31/028;H01L31/0368;H01L31/11;H03F3/08;

  • 国家 US

  • 入库时间 2022-08-21 11:30:30

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