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Method of interconnect for high density 2.5D and 3D integration
Method of interconnect for high density 2.5D and 3D integration
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机译：用于高密度2.5D和3D集成的互连方法
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摘要
Methods and apparatus are described to enable copper-copper (Cu-Cu) bonding at reduced temperatures (eg, at most 200 ° C.) by significantly reducing Cu oxide formation. These techniques provide faster cycle times and do not involve special measures (eg forming gas). Such techniques may also allow longer queue (Q) or staging times. One exemplary semiconductor structure (100) is generally a semiconductor layer (102), an adhesive layer (104) disposed over the semiconductor layer (102), and a metal disposed over the adhesive layer (104). A layer (106) and a cathode metal layer (108) disposed over the anode metal layer (106). The oxidation potential of the anode metal layer (106) may be higher than the oxidation potential of the cathode metal layer (108). Such a semiconductor structure (100) may be utilized in the manufacture of IC packages (300, 400) implementing 2.5D or 3D integration.
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