首页> 外文期刊>電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials >Novel reconfigured wafer-to-wafer (W2W) hybrid bonding technology using ultra-high density nano-Cu filaments for exascale 2.5D/3D integration
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Novel reconfigured wafer-to-wafer (W2W) hybrid bonding technology using ultra-high density nano-Cu filaments for exascale 2.5D/3D integration

机译:新型重新配置的晶圆对晶圆(W2W)混合键合技术,使用超高密度纳米Cu灯丝进行百亿分之2.5D / 3D集成

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摘要

In order to solve the critical issues of current standard chip-to-wafer (C2W)/wafer-to-wafer (W2W) hybrid bonding technologies, we propose novel reconfigured wafer-to-wafer (W2W) hybrid bonding technology using three types of scaled tiny electrodes with slightly extruded structure and unique adhesive layers for ultra-high density 2.5D/3D integration applications. Especially, we developed a high stacking yield hybrid bonding technology using unique anisotropic conductive film composed of ultra-high density nano-Cu filaments for exascale 2.5D/3D integration. Multi numbers of TEG die with 7mm × 23mm size are simultaneously aligned with high accuracy around lμm by chip self-assembly method and thermal-compression bonding in wafer-level. Totally 3,898,000 of 4,309,200 electrodes with 3μm diameter/6μm pitch in each TEG chip are well intact-bonded by new hybrid bonding technology using ultra-high density nano-Cu filaments which gives rise to the joining yield of 90%.
机译:为了解决当前标准的芯片对晶圆(C2W)/晶圆对晶圆(W2W)混合键合技术的关键问题,我们提出了使用三种类型的新型重新配置的晶圆对晶圆(W2W)混合键合技术小尺寸电极,具有轻微挤压的结构和独特的粘合剂层,适用于超高密度2.5D / 3D集成应用。特别是,我们使用独特的各向异性导电膜(由超高密度纳米Cu细丝组成)开发了高堆叠良率混合键合技术,用于2.5D / 3D集成度。通过芯片自组装方法和晶圆级热压键合,可同时对准多个尺寸为7mm×23mm的TEG芯片,并在1μm左右的高精度范围内对齐。通过使用超高密度纳米铜丝的新型混合键合技术,每个TEG芯片中共有3,898,000个电极,直径为3μm,节距为3μm,完好无损地接合,从而提高了90%的接合率。

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