首页>
外国专利>
- METHOD FOR CORRECTING ELECTRONIC PROXIMITY EFFECTS USING OFF-CENTER SCATTERING FUNCTIONS
- METHOD FOR CORRECTING ELECTRONIC PROXIMITY EFFECTS USING OFF-CENTER SCATTERING FUNCTIONS
展开▼
机译：-使用偏心散射函数校正电子邻近效应的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention discloses an electron beam projection method, particularly for use in direct or indirect recording lithography and electron microscopy. Especially for critical dimensions or resolutions of less than 50 nm, the proximity effects caused by forward and backward scattering of the electrons of the beam interacting with the target must be corrected. To this end, convolution of the target geometry and point spread function is traditionally used. In the prior art, the point spread function is focused on the beam and uses the Gaussian or exponential distribution law. According to the present invention, at least one component of the point spread function has a maximum value that is not located at the center of the beam. Preferably, the maximum value is located in the backscattering peak. Preferably, the point spread function uses a gamma distribution law.
展开▼
