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METHOD FOR DEPOSITING Ti-Te FILM BY ALD, MULTILAYER PHASE-CHANGE STRUCTURE INCLUDING Ti-Te BARRIER FILM AND PHASE-CHANGE MEMORY DEVICE INCLUDING SAME
METHOD FOR DEPOSITING Ti-Te FILM BY ALD, MULTILAYER PHASE-CHANGE STRUCTURE INCLUDING Ti-Te BARRIER FILM AND PHASE-CHANGE MEMORY DEVICE INCLUDING SAME
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机译：通过ALD沉积包括Ti-Te势垒膜的多层相变结构和包含相同相变存储器的Ti-Te膜的方法
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摘要
Provided are a method for depositing a Ti-Te film by atomic layer deposition (ALD), a Ti-doping method by ALD of a phase-change material film, a multilayer phase-change structure including a Ti-Te barrier film and a phase-change memory device. In the phase-change memory device, a selection device and a memory device are selectively designed by Ti-doping concentration control.;COPYRIGHT KIPO 2020
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