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METHOD FOR DEPOSITING Ti-Te FILM BY ALD, AND MULTILAYER PHASE-CHANGE STRUCTURE INCLUDING Ti-Te BARRIER FILM AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME
METHOD FOR DEPOSITING Ti-Te FILM BY ALD, AND MULTILAYER PHASE-CHANGE STRUCTURE INCLUDING Ti-Te BARRIER FILM AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME
A Ti-Te film deposition method using atomic layer deposition (ALD), a Ti-doping method using atomic layer deposition (ALD) of a phase change material film, and a multilayer phase change structure including a Ti-Te separation layer and a phase change memory device In the phase change memory device, the selection device and the memory device can be selectively designed by controlling the Ti-doping concentration.
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