Provided is a method for providing a semiconductor device, in which a doped semiconductor layer is deposited on a semiconductor underlayer, at least a portion of the semiconductor underlayer is exposed for the doped semiconductor layer, a dopant for the doped semiconductor layer is selected from a p-type dopant and an n-type dopant, an ultraviolet-assisted low temperature anneal of the doped semiconductor layer is performed in an ambient, the ambient is selected from an oxidizing ambient and a nitriding ambient, the oxidizing ambient is used for the n-type dopant, the nitriding ambient is used for the p-type dopant, a sacrificial layer is formed by the doped semiconductor layer during the ultraviolet-assisted low temperature anneal, and the dopant is driven into at least one portion of the semiconductor underlayer from the doped semiconductor layer by the ultraviolet-assisted low temperature anneal, thereby forming a doped semiconductor underlayer and removing the sacrificial layer.
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