Formation of non-line-of-sight source drain extensions in NMOS pinpets using N-doped selective epitaxial growth

• 1. 用以降低锗NMOS晶体管的掺杂剂扩散的非选择性外延源极/漏极沉积 [P] . 中国专利： CN111133587A . 2020-05-08
• 2. 具有直埋P型区的延伸漏极NMOS晶体管 [P] . 中国专利： CN109148301A . 2019-01-04
• 3. Forming non-line-of-sight source drain extension in an NMOS FINFET using n-doped selective epitaxial growth [P] . 美国专利： US10483355B2 . 2019-11-19

  机译： 使用n掺杂选择性外延生长在NMOS FINFET中形成非视线源漏扩展

• 4. FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET USING N-DOPED SELECTIVE EPITAXIAL GROWTH [P] . 美国专利： US2018240893A9 . 2018-08-23

  机译： 使用N掺杂的选择性表皮生长在NMOS FINFET中形成非视线源极漏极扩展

• 5. FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET USING N-DOPED SELECTIVE EPITAXIAL GROWTH [P] . 美国专利： US2018069100A1 . 2018-03-08

  机译： 使用N掺杂的选择性表皮生长在NMOS FINFET中形成非视线源极漏极扩展

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