Selective Etching of Silicon for Selective Area Epitaxial Growth

机译：选择性蚀刻硅选择性区域外延生长

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Process conditions are described for selectively etching silicon by wet and dryetching techniques. High etch rates are achieved and a selectivity (etch rate of silicon/etch rate of masking material) as high as 600 is obtained when thermal oxide is used as a mask and SF6 as the gas in a reactive ion etcher at high pressure. Dry etch process parameters are optimized to produce undercut edge profiles and smooth silicon floors, both of which are necessary to accommodate the growth of epitaxial material in recesses. p4.

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作者
Advena, D. J.; Dinan, J. H.;
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年度 1996
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总页数 16
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Epitaxy; Growth; Etching; Silicon; Methodology; High rate; Parameters; Materials; Edges; Floors; High pressure; Moisture content; Profiles; Oxides; Thermochemistry; Low level; Dry materials; Masking;

机译：外延;生长;蚀刻;硅;方法;高速率;参数;材料;边缘;地板;高压;含水量;型材;氧化物;热化学;低水平;干燥材料;掩蔽;

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2. Low thermal budget surface cleaning after dry etching for selective silicon epitaxial growth [J] . Takumi Nakahata, Kazuma Yamamoto, Junji Tanimura Journal of Crystal Growth . 2001,第4期

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3. Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methods [J] . Guangjian Zhu, Tao Liu, Zhenyang Zhong, Nanoscale Research Letters . 2020,第1期

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4. Pre-Epitaxial Plasma Etch Treatment for the Selective Epitaxial Growth of Silicon in High Aspect Ratio 3D NAND Memory [C] . Cheng-Yi Lung, Yao-An Chung, Ming-Tsung Wu, Annual SEMI Advanced Semiconductor Manufacturing Conference . 2019

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5. Selective epitaxial growth of silicon carbide on silicon by low-temperature chemical vapor deposition. [D] . Gao, Ying. 1997

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Selective Etching of Silicon for Selective Area Epitaxial Growth

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