首页> 外国专利> ELECTROSTATIC DISCHARGE (ESD) PROTECTION STRUCTURE UTILIZING FLOOR PLAN DESIGN TO PROTECT INTEGRATED CIRCUIT FROM ESD EVENT, AND RELATED INTEGRATED CIRCUIT AND ESD PROTECTION METHOD

ELECTROSTATIC DISCHARGE (ESD) PROTECTION STRUCTURE UTILIZING FLOOR PLAN DESIGN TO PROTECT INTEGRATED CIRCUIT FROM ESD EVENT, AND RELATED INTEGRATED CIRCUIT AND ESD PROTECTION METHOD

机译:静电放电(ESD)保护结构,利用地板计划设计来保护集成电路不受ESD事件影响,以及相关的集成电路和ESD保护方法

摘要

An electrostatic discharge protection (ESD) structure for protecting a core circuit of an integrated circuit from an ESD event received by a conductive pad of the integrated circuit is provided. The ESD protection structure includes a first conductive layer, a clamp device, a first electrical connection part and a second electrical connection part. The first conductive layer is formed below the conductive pad, and includes a first conductive portion, an insulating portion and a second conductive portion. The insulating portion is surrounded by the first conductive portion and the second conductive portion. The first conductive portion is electrically connected between the conductive pad and the second conductive portion. The clamp device is arranged for clamping the ESD event. The first electrical connection part is coupled between the first conductive portion and the clamp device. The second electrical connection part is coupled between the second conductive portion and the core circuit.
机译:提供一种静电放电保护(ESD)结构,用于保护集成电路的核心电路免受由集成电路的导电垫接收的ESD事件的影响。 ESD保护结构包括第一导电层,钳位器件,第一电连接部分和第二电连接部分。第一导电层形成在导电焊盘下方,并且包括第一导电部分,绝缘部分和第二导电部分。绝缘部分被第一导电部分和第二导电部分围绕。第一导电部分电连接在导电垫和第二导电部分之间。夹持装置被布置用于夹持ESD事件。所述第一电连接部耦接在所述第一导电部与所述钳位装置之间。第二电连接部联接在第二导电部分和核心电路之间。

著录项

  • 公开/公告号US2019013309A1

    专利类型

  • 公开/公告日2019-01-10

    原文格式PDF

  • 申请/专利权人 HIMAX TECHNOLOGIES LIMITED;

    申请/专利号US201715643459

  • 发明设计人 HUNG-YI CHEN;CHING-LING TSAI;

    申请日2017-07-06

  • 分类号H01L27/02;H02H9/04;

  • 国家 US

  • 入库时间 2022-08-21 12:04:02

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