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IMPLANTS USING ULTRASONIC BACKSCATTER FOR RADIATION DETECTION AND ONCOLOGY
IMPLANTS USING ULTRASONIC BACKSCATTER FOR RADIATION DETECTION AND ONCOLOGY
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机译：使用超声波背散射进行辐射检测和肿瘤学植入
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摘要
Described herein is an implantable device comprising a radiation-sensitive element (such as a transistor) configured to modulate a current as a function of radiation exposure to the transistor; and an ultrasonic device comprising an ultrasonic transducer configured to emit an ultrasonic backscatter that encodes the radiation exposure to the transistor. Further described herein is an implantable device comprising a radiation-sensitive element (such as a diode) configured to generate an electrical signal upon encountering radiation; an integrated circuit configured to receive the electrical signal and modulate a current based on the received electrical signal; and an ultrasonic transducer configured to emit an ultrasonic backscatter based on the modulated current encoding information relating to the encountered radiation. Further described are systems including one or more implantable devices and an interrogator comprising one or more ultrasonic transducers configured to transmit ultrasonic waves to the one or more implantable devices or receive ultrasonic backscatter from the one or more implantable devices. Also describe are computer systems for operating implantable devices, methods of detecting radiation, methods of treating a solid cancer in a subject, and methods of monitoring a subject for recurrence of a solid cancer.
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