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Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
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机译:在功率开关和射频应用中的碳化硅衬底中具有深注入p型层的氮化镓高电子迁移率晶体管及其制造工艺
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摘要
The disclosure is directed to a high-electron mobility transistor that includes a SiC substrate layer, a GaN buffer layer arranged on the SiC substrate layer, and a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided. The p-type material layer is provided in one of the following: the SiC substrate layer and a first layer arranged on the SiC substrate layer. A method of making the high-electron mobility transistor is also disclosed.
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