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Gallium Nitride High-Electron Mobility Transistors with Deep Implanted P-Type Layers in Silicon Carbide Substrates for Power Switching and Radio Frequency Applications and Process for Making the Same
Gallium Nitride High-Electron Mobility Transistors with Deep Implanted P-Type Layers in Silicon Carbide Substrates for Power Switching and Radio Frequency Applications and Process for Making the Same
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机译：用于电源开关和射频应用的碳化硅衬底中具有深注入P型层的氮化镓高电子迁移率晶体管及其制造工艺
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摘要
The disclosure is directed to a high-electron mobility transistor that includes a SiC substrate layer, a GaN buffer layer arranged on the SiC substrate layer, and a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided. The p-type material layer is provided in one of the following: the SiC substrate layer and a first layer arranged on the SiC substrate layer. A method of making the high-electron mobility transistor is also disclosed.
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