首页> 外国专利> MAGNETIC TUNNEL JUNCTION WITH PERPENDICULAR SHAPE ANISOTROPY AND MINIMISED VARIATION OF TEMPERATURE MEMORY POINT AND LOGIC ELEMENT INCLUDING THE MAGNETIC TUNNEL JUNCTION, METHOD OF MANUFACTURING THE MAGNETIC TUNNEL JUNCTION

MAGNETIC TUNNEL JUNCTION WITH PERPENDICULAR SHAPE ANISOTROPY AND MINIMISED VARIATION OF TEMPERATURE MEMORY POINT AND LOGIC ELEMENT INCLUDING THE MAGNETIC TUNNEL JUNCTION, METHOD OF MANUFACTURING THE MAGNETIC TUNNEL JUNCTION

机译：具有垂直形状各向异性和最小化温度记忆点和逻辑元素（包括磁隧道结）的正交形状各向异性的磁隧道结，制造磁隧道结的方法

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摘要

A magnetic tunnel junction with out-of-plane magnetisation includes a storage layer; a reference layer; and a tunnel barrier layer. The two magnetisation states of the storage layer are separated by an energy barrier including a contribution due to the shape anisotropy of the storage layer and a contribution of interfacial origin for each interface of the storage layer. The storage layer has a thickness comprised between 0.8 and 8 times a characteristic dimension of a planar section of the tunnel junction. The contribution to the energy barrier due to the shape anisotropy of the storage layer is at least two times greater and preferably at least 4 times greater than the contributions to the energy barrier of interfacial origin.

机译：平面外磁化的磁性隧道结包括存储层;参考层;和隧道势垒层。存储层的两个磁化状态由能垒隔开，该能垒包括由于存储层的形状各向异性引起的贡献和对于存储层的每个界面的界面起源的贡献。存储层的厚度为隧道结的平面部分的特征尺寸的0.8至8倍。由于存储层的形状各向异性而对能垒的贡献比对界面起源的能垒的贡献至少大两倍，并且优选地至少大四倍。

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公开/公告号US2019287591A1

专利类型
公开/公告日2019-09-19

原文格式PDF
申请/专利权人 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS);INSTITUT POLYTECHNIQUE DE GRENOBLE;
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申请/专利号US201916282873
发明设计人 NICOLAS PERRISSIN-FABERT;BERNARD DIENY;LUCIAN PREJBEANU;RICARDO SOUSA;
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申请日2019-02-22
分类号G11C11/16;H01L27/22;H01L43/08;H01L43/12;H01L43/10;H01L43/02;
国家 US
入库时间 2022-08-21 12:11:56

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