首页> 外国专利> Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices

Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices

机译：具有倾斜侧壁小面的纤锌矿异质外延结构，用于硅CMOS兼容半导体器件中的缺陷传播控制

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III-N semiconductor heterostructures including a raised III-N semiconductor structures with inclined sidewall facets are described. In embodiments, lateral epitaxial overgrowth favoring semi-polar inclined sidewall facets is employed to bend crystal defects from vertical propagation to horizontal propagation. In embodiments, arbitrarily large merged III-N semiconductor structures having low defect density surfaces may be overgrown from trenches exposing a (100) surface of a silicon substrate. III-N devices, such as III-N transistors, may be further formed on the raised III-N semiconductor structures while silicon-based transistors may be formed in other regions of the silicon substrate.

机译：描述了III-N半导体异质结构，其包括具有倾斜的侧壁小平面的凸起的III-N半导体结构。在实施例中，采用有利于半极性倾斜侧壁小面的横向外延过度生长来将晶体缺陷从垂直传播弯曲到水平传播。在实施例中，具有低缺陷密度表面的任意大的合并的III-N半导体结构可以从暴露硅衬底的（100）表面的沟槽中过度生长。诸如III-N晶体管的III-N器件可以进一步形成在凸起的III-N半导体结构上，而基于硅的晶体管可以形成在硅衬底的其他区域中。

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公开/公告号US10325774B2

专利类型
公开/公告日2019-06-18

原文格式PDF
申请/专利权人 INTEL CORPORATION;
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申请/专利号US201415504634
发明设计人 SANSAPTAK DASGUPTA;HAN WUI THEN;BENJAMIN CHU-KUNG;MARKO RADOSAVLJEVIC;SANAZ K. GARDNER;SEUNG HOON SUNG;RAVI PILLARISETTY;ROBERT S. CHAU;
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申请日2014-09-18
分类号H01L21/02;H01L29/778;H01L29/04;H01L29/06;H01L29/20;H01L21/8252;H01L27/06;H01L29/16;H01L29/267;H01L29/78;
国家 US
入库时间 2022-08-21 12:16:16

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