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Power rail inbound middle-of-line (MOL) routing

机译:电源轨入站中线(MOL)布线

摘要

In certain aspects, the semiconductor die includes a power rail, a first gate, and a second gate. The semiconductor die also has a first gate contact electrically coupled to the first gate, wherein the first gate contact is formed from a first middle-of-line (MOL) metal layer; A second gate contact electrically coupled to the second gate, wherein the second gate contact is formed from a first MOL metal layer. The semiconductor die further includes an interconnect formed from the second MOL metal layer, wherein the interconnect is electrically coupled to the first and second gate contacts, wherein at least a portion of the interconnect includes a power Located at the bottom of the rail. [Selection] Figure 9
机译:在某些方面,半导体管芯包括电源轨,第一栅极和第二栅极。半导体管芯还具有电耦合到第一栅极的第一栅极接触,其中第一栅极接触由第一中间线(MOL)金属层形成;第二栅极触点电耦合到第二栅极,其中第二栅极触点由第一MOL金属层形成。半导体管芯还包括由第二MOL金属层形成的互连,其中,所述互连电耦合至第一和第二栅极接触,其中,所述互连的至少一部分包括位于导轨底部的电源。 [选择]图9

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