首页> 外国专利> MULTI-AXIAL FORCE SENSOR, METHOD OF MANUFACTURING THE MULTI-AXIAL FORCE SENSOR, AND METHOD FOR OPERATING THE MULTI-AXIAL FORCE SENSOR

MULTI-AXIAL FORCE SENSOR, METHOD OF MANUFACTURING THE MULTI-AXIAL FORCE SENSOR, AND METHOD FOR OPERATING THE MULTI-AXIAL FORCE SENSOR

机译:多轴力传感器,制造多轴力传感器的方法以及操作多轴力传感器的方法

摘要

A microelectromechanical transducer (1), comprising: a semiconductor body (2), having a first surface (2a) and a second surface (2b) opposite to one another; a plurality of trenches (4) extending in the semiconductor body (2) from the first surface (2a) towards the second surface (2b), including a first pair of trenches (4a) having a respective main direction of extension along a first axis (x), and a second pair of trenches (4b) having a respective main direction of extension along a second axis (y) orthogonal to the first axis; a first piezoresistive sensor (6a) and a second piezoresistive sensor (6b) extending at the first surface (2a) of the semiconductor body (2), respectively arranged between said first and second pair of trenches (4a, 4b), wherein the first piezoresistive sensor (6a), the second piezoresistive sensor (6b) and the plurality of trenches (4) form an active region (7a, 7b); and a first structural body (8), mechanically coupled to the first surface (2a) of the semiconductor body (2) in such a way to form a first sealed cavity (10) which encloses the active region.
机译:一种微机电换能器(1),包括:半导体本体(2),具有彼此相对的第一表面(2a)和第二表面(2b);和从第一表面(2a)向第二表面(2b)在半导体主体(2)中延伸的多个沟槽(4),包括第一对沟槽(4a),第一对沟槽(4a)具有分别沿第一轴延伸的主方向(x);第二对沟槽(4b),其各自的主延伸方向沿着与第一轴线正交的第二轴线(y)延伸;在半导体本体(2)的第一表面(2a)上延伸的第一压阻传感器(6a)和第二压阻传感器(6b)分别布置在所述第一对和第二对沟槽(4a,4b)之间,其中第一压阻传感器(6a),第二压阻传感器(6b)和多个沟槽(4)形成有源区(7a,7b);第一结构体(8)以机械方式耦合到半导体本体(2)的第一表面(2a),以形成包围有源区的第一密封腔(10)。

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