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SILICON CHALCOGENATE PRECURSORS, METHODS OF FORMING THE SILICON CHALCOGENATE PRECURSORS, AND RELATED METHODS OF FORMING SILICON NITRIDE AND SEMICONDUCTOR STRUCTURES
SILICON CHALCOGENATE PRECURSORS, METHODS OF FORMING THE SILICON CHALCOGENATE PRECURSORS, AND RELATED METHODS OF FORMING SILICON NITRIDE AND SEMICONDUCTOR STRUCTURES
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机译：硅质硫属元素前驱物，硅质硫属元素前驱物的形成方法以及硅氮化物和半导体结构的形成方法
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摘要
A silicon chalcogenate precursor comprising the chemical formula of Si(XR1)nR24-n, where X is sulfur, selenium, or tellurium, R1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.
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