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HYDROGEN MITIGATION SCHEMES IN THE PASSIVATION OF ADVANCED DEVICES
HYDROGEN MITIGATION SCHEMES IN THE PASSIVATION OF ADVANCED DEVICES
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机译：钝化高级设备中的氢缓解方案
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摘要
The semiconductor devices and its manufacturing method of a kind of silicon nitride (SiN) passivating structure are disclosed. In general, semiconductor devices includes the semiconductor body on the surface of semiconductor body and SiN passivating structures. In one embodiment, SiN passivating structures include one or more hydrogen-free SiN layers, it is preferred that directly, the surface of semiconductor body, hydrogen barrier layer, and preferably directly on surface, the opposite semiconductor body of one or more hydrogen-free SiN layers, chemical vapor deposition SiN overcoat, preferably directly, the opposite hydrogen-free SiN layer of one or more in the surface of hydrogen barrier layer. The hydrogen barrier layer preferably includes the identical or different composition of one or more oxide skin(coating)s. In addition, in one embodiment, hydrogen forms barrier layer, pass through atomic layer deposition.
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