首页>
外国专利>
Hydrogen mitigation schemes in the passivation of advanced devices
Hydrogen mitigation schemes in the passivation of advanced devices
展开▼
机译:先进设备钝化中的氢缓解方案
展开▼
页面导航
摘要
著录项
相似文献
摘要
Embodiments of a Silicon Nitride (SiN) passivation structure for a semiconductor device are disclosed. In general, a semiconductor device includes a semiconductor body and a SiN passivation structure over a surface of the semiconductor body. In one embodiment, the SiN passivation structure includes one or more Hydrogen-free SiN layers on, and preferably directly on, the surface of the semiconductor body, a Hydrogen barrier layer on, and preferably directly on, a surface of the one or more Hydrogen-free SiN layers opposite the semiconductor body, and a Chemical Vapor Deposition (CVD) SiN layer on, and preferably directly on, a surface of the Hydrogen barrier layer opposite the one or more Hydrogen-free SiN layers. The Hydrogen barrier layer preferably includes one or more oxide layers of the same or different compositions. Further, in one embodiment, the Hydrogen barrier layer is formed by Atomic Layer Deposition (ALD).
展开▼