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METHOD OF PRODUCING MULTILAYER EPITAXIAL P-I-N STRUCTURE BASED ON GaAs-GaAlAs COMPOUNDS BY METHOD OF LIQUID-PHASE EPITAXY

机译:液相滴定法制备基于GaAs-GaAlAs化合物的多层表位P-I-N结构的方法

摘要

FIELD: chemistry.;SUBSTANCE: invention refers to the technology of multilayer semiconductor structures of compounds A3B5 by the method of liquid-phase epitaxy, and more particularly to methods of manufacturing semiconductor p-i-n structures in the system GaAs-GaAlAs for power electronic equipment. When the structure is grown to the temperature range of inversion of the silicon impurity in gallium arsenide of 885-895°C, the epitaxial process is carried out in an atmosphere of high-purity inert gas, and then to the temperature of the epitaxy termination - in an atmosphere of high-purity hydrogen.;EFFECT: increase in the values of the reverse breakdown voltage simultaneously with the elimination of thyristor regions on the current-voltage characteristics of the structures obtained.;1 cl
机译:发明领域本发明涉及通过液相外延法制备化合物A 3 B 5 的多层半导体结构技术,尤其涉及方法电力电子设备GaAs-GaAlAs系统中制造半导体引脚结构的过程。当结构生长到885-895°C的砷化镓中的硅杂质转化的温度范围时,在高纯度惰性气体气氛中进行外延工艺,然后到外延终止温度-在高纯度氢气氛中;效果:反向击穿电压值的增加与消除晶闸管区域同时对所得结构的电流-电压特性的影响; 1 cl

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