A method of producing a multilayer epitaxial p-i-n structure based on GaAs-GaAlAs compounds by liquid phase epitaxy

• 1. 多层嵌埋结构GaSb量子点材料的液相外延制备方法 [P] . 中国专利： CN103681260A . 2014-03-26
• 2. 一种基于液相外延法的过渡金属基SURMOFs的制备方法 [P] . 中国专利： CN112920416A . 2021-06-08
• 3. METHOD OF PRODUCING MULTILAYER EPITAXIAL P-I-N STRUCTURE BASED ON GaAs-GaAlAs COMPOUNDS BY METHOD OF LIQUID-PHASE EPITAXY [P] . 俄罗斯专利： RU2016142023A3 . 2018-04-27

  机译： 液相滴定法制备基于GaAs-GaAlAs化合物的多层表位P-I-N结构的方法

• 4. METHOD OF PRODUCING MULTILAYER EPITAXIAL P-I-N STRUCTURE BASED ON GaAs-GaAlAs COMPOUNDS BY METHOD OF LIQUID-PHASE EPITAXY [P] . 俄罗斯专利： RU2668661C2 . 2018-10-02

  机译： 液相滴定法制备基于GaAs-GaAlAs化合物的多层表位P-I-N结构的方法

• 5. METHOD FOR OBTAINING P-I-N STRUCTURE BASED ON GAAS-GAALAS COMPOUNDS BY LIQUID-PHASE EPITAXY [P] . RU2749501C1 . 2021-06-11

  机译： 基于GaAs-Gaalas化合物获得P-I-N结构的方法通过液相外延

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