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AVALANCHE PHOTODIODE USING SILICON NANOWIRE AND SILICON NANOWIRE PHOTOMULTIPLIER USING THE SAME
AVALANCHE PHOTODIODE USING SILICON NANOWIRE AND SILICON NANOWIRE PHOTOMULTIPLIER USING THE SAME
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机译：使用硅纳米粉的雪崩光电二极管和使用硅纳米粉的硅光电倍增器
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摘要
The present invention provides a semiconductor device comprising a first silicon nanowire formed of silicon (Si), a first conductive region formed on one surface of the first silicon nanowire by doping a first dopant, and a second conductive region formed on one surface of the first silicon nanowire, And a second conductive region doped with a second dopant having a conductivity type different from that of the first dopant so as to be continuous in the longitudinal direction from the first conductive region, The avalanche multiplication of the internal current due to the incidence of light from the outside occurs when the voltage is greater than a predetermined breakdown voltage.;
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