INTERCONNECT STRUCTURE FORMED WITH A HIGH ASPECT RATIO SINGLE DAMASCENE COPPER LINE ON A NON-DAMASCENE VIA

• 1. 一种降低铜互连方块电阻的单大马士革方法 [P] . 中国专利： CN102446848B . 2014.08.13
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• 3. Interconnect structure formed with a high aspect ratio single damascene copper line on a non-damascene via [P] . 美国专利： US10211093B2 . 2019-02-19

  机译： 在非大马士革通孔上以高长宽比的单大马士革铜线形成的互连结构

• 4. INTERCONNECT STRUCTURE FORMED WITH A HIGH ASPECT RATIO SINGLE DAMASCENE COPPER LINE ON A NON-DAMASCENE VIA [P] . 美国专利： US2018012796A1 . 2018-01-11

  机译： 通过非大马士革的高纵横比单大马士革铜线制成的互连结构

• 5. Methods that use at least a dual damascene process and, optionally, a single damascene process to form interconnects with hybrid metallization and the resulting structures [P] . 美国专利： US9824970B1 . 2017-11-21

  机译： 至少使用双金属镶嵌工艺和（可选）单个金属镶嵌工艺形成具有混合金属化层和所得结构的互连的方法

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