首页> 外国专利> PHOTORESIST DESIGN LAYOUT PATTERN PROXIMITY CORRECTION THROUGH FAST EDGE PLACEMENT ERROR PREDICTION VIA A PHYSICS-BASED ETCH PROFILE MODELING FRAMEWORK

PHOTORESIST DESIGN LAYOUT PATTERN PROXIMITY CORRECTION THROUGH FAST EDGE PLACEMENT ERROR PREDICTION VIA A PHYSICS-BASED ETCH PROFILE MODELING FRAMEWORK

机译：通过基于物理的蚀刻轮廓模型框架，通过快速边缘位置误差预测来实现光致抗蚀剂设计布局图案的接近度校正

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摘要

Disclosed are methods of generating a proximity-corrected design layout for photoresist to be used in an etch operation. The methods may include identifying a feature in an initial design layout, and estimating one or more quantities characteristic of an in-feature plasma flux (IFPF) within the feature during the etch operation. The methods may further include estimating a quantity characteristic of an edge placement error (EPE) of the feature by comparing the one or more quantities characteristic of the IFPF to those in a look-up table (LUT, and/or through application of a multivariate model trained on the LUT, e.g., constructed through machine learning methods (MLM)) which associates values of the quantity characteristic of EPE with values of the one or more quantities characteristics of the IFPF. Thereafter, the initial design layout may be modified based on at the determined quantity characteristic of EPE.

机译：公开了一种为在蚀刻操作中使用的光致抗蚀剂生成接近校正的设计布局的方法。该方法可以包括在初始设计布局中识别特征，以及在蚀刻操作期间估计特征内特征内等离子体通量（IFPF）的一个或多个量特征。该方法可以进一步包括通过将IFPF的一个或多个特征量与查找表（LUT）中的一个或多个特征量进行比较，和/或通过应用多元来估计特征的边缘放置误差（EPE）的特征量。在LUT上训练的模型，例如通过机器学习方法（MLM）构建的模型，该模型将EPE的数量特征值与IFPF的一个或多个数量特征值相关联。此后，可以基于所确定的EPE的数量特性来修改初始设计布局。

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公开/公告号SG10201705049VA

专利类型
公开/公告日2018-01-30

原文格式PDF
申请/专利权人 LAM RESEARCH CORPORATION;
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申请/专利号SG10201705049V
发明设计人 SRIRAMAN SARAVANAPRIYAN;WISE RICHARD;SINGH HARMEET;PATERSON ALEX;BAILEY III ANDREW D.;VAHEDI VAHID;GOTTSCHO RICHARD A.;
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申请日2017-06-19
分类号
国家 SG
入库时间 2022-08-21 12:49:31

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