BİR InGaAs/InP KIZILÖTESİ FOTODEDEKTÖR ODAK DÜZLEM DİZİNİ (ODD) YAPISI VE BUNUN FABRİKASYON YÖNTEMİ

• 1. 一种平面InGaAs/InP APD光电探测器的制备方法 [P] . 中国专利： CN113707763A . 2021-11-26
• 2. 非制冷薄膜型红外焦平面阵列探测器结构及其制备方法 [P] . 中国专利： CN103117287B . 2015.09.16
• 3. GaN TABANLI YÜKSEK ELEKTRON MOBİLİTELİ TRANSİSTÖR (YEMT) AYGIT YAPISI VE BUNUN FABRİKASYON YÖNTEMİ [P] . TR201710766A2 . 2019-02-21

  机译： GaN基高电子迁移率晶体管结构及其制备方法

• 4. ODAK DÜZLEM DİZİNİ KOLON YAPILARINDA ELEKTROLİZ YOLUYLA İNDİYUM (In) METAL KAPLAMA YÖNTEMİ [P] . TR201713719A2 . 2019-03-21

  机译： 聚焦平面指数中的电镀铟（In）金属方法

• 5. BİR SİLİKON NİTRAT (Si3N4) TABANLI T-GEOMETRİK ŞEKİLLİ KAPI İÇEREN YÜKSEK ELEKTRON MOBİLİTELİ TRANSİSTÖR (YEMT) FABRİKASYON YÖNTEMİ [P] . TR201515977A2 . 2017-06-21

  机译： 高电子迁移率晶体管（YEMT）制备方法，包括基于氮化硅（Si3N4）的T-几何形状的门

• 1. Single Photon Detection of InGaAs/InP APD Based on Gated-mode Operation at Telecom Wavelengths [J] . LIAO Chang-jun, FENG Jin-yuan, LIU Wei-ping, 半导体光子学与技术（英文版） . 2005,第002期
• 2. Inp/ingaas Heterojunction Phototransistor Operating At Wavelengths Above 2 μm Realized Using Strained Inas/ingaas Multiquantum Well Absorption Layer [J] . Hideki Fukano, Tomonari Sato, Manabu Mitsuhara, Japanese journal of applied physics . 2008,第10issue1期
• 3. Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy [J] . Thi Kim Oanh Vu, Lee Kyoung Su, Lee Sang Jun, Journal of nanoscience and nanotechnology . 2018,第9期
• 4. Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors [J] . Wang S. Y., Chang C. A., Chang C. M., Applied Physics Letters . 2012,第7期
• 5. Microwave noise characteristics of InP-based high electron mobility transistors with InGaAs channel and InGaAs/InP composite channel: a comparative study [C] . Yuwei Liu, Hong Wang, Rong Zeng Indium Phosphide and Related Materials, 2005. International Conference on . 2005
• 6. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998
• 7. The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures [O] . Xiaohong Zhao, Hongliang Lu, Manli Zhao, 2019
• 8. BULANIK MANTIK YÖNTEMİYLE KIZILÇAMDA VERİMLİLİĞİN MODELLENMESİ [O] . Emre KUZUGÜDENLİ 2018
• 9. Nondegenerate Four-Wave Mixing Wavelength Conversion in Low-Loss Passive InGaAsP-InP Quantum-Well Waveguides [R] . Donnelly, J. P., Le, H. Q., Swanson, E. A., 1996

• 1. 单片集成透镜高速１×４ ＩｎＧａＡｓ／ＩｎＰ ｐｉｎ探测器阵列研究 [C] . 肖德元 . 第六届全国光纤通信学术会议 . 1993
• 2. InGaAs焦平面探测器电串音性能研究 [A] . 李冬雪 . 2014