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ULTRA-LOW TRANSCONDUCTANCE AMPLIFIER USING CARBON NANOTUBE FIELD EFFECT TRANSISTORS
ULTRA-LOW TRANSCONDUCTANCE AMPLIFIER USING CARBON NANOTUBE FIELD EFFECT TRANSISTORS
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机译：使用碳纳米管场效应晶体管的超低导通放大器
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摘要
Circuits for acquisition arid preprocessing of physiological" signals from the human body {e.g. ECG, EEG, EMG, EOG), for subsequent digital signal processing, require analog signal processing blocks operating at very low frequencies typically in the sub- 300 Hz range. Conventional opamp-RC design methodologies are not gffl&b"M for such very low freqriericMs dtfe to t"he fequifemerit" of large vailiXes of the passive components. An Operational Transconductance Amplifier (OTA) used along with capacitors can help alleviate the need of on-chip resistors. However, even in the OTA-C design technique, the required values of capacitors tend to be large (and therefore infeasible from on-chip implementation perspective) if the transconductance of the OTA is moderate to high. Therefore, research attention has been directed towards the design of ultra-low transconductance OTAs which can be coupled with small-sized capacitors to design analog circuits for very low frequency applications. Previous attempts at the design of lbw-7m OTAs have" yielded nliriimum transconductance values of around 15 pA/V. A novel Ultra-low Transconductance Amplifier based on Carbon Nanotube Field Effect Transistors (CNFET) is presented. By virtue of the use of CNFETs, the proposed circuit would riot suffer from the issues (like slibft channel effects, gat"eto- channel tunneling, source-to-drain tunneling, etc.) that have arisen due to the continued and aggressive scaling of the conventional MOSFETs. Further, as is shown by the simulational verification, the value of gm obtained is 2.59 pA/V which is well below" the crifferifcly reported wbfks to the best of ottf knowledge.
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机译：用于随后的数字信号处理的，用于从人体采集和预处理生理“信号”的电路（例如ECG，EEG，EMG，EOG）需要模拟信号处理模块，该模块必须以非常低的频率（通常在300 Hz以下）工作。对于如此低的频率，由于无源元件的大量可用性的“正当性”，opamp-RC设计方法并非如此。与电容器一起使用的运算跨导放大器（OTA）可以帮助减轻对片上电阻器的需求。但是，即使在OTA-C设计技术中，如果OTA的跨导值从中到高，电容器的要求值也往往很大（因此，从片上实现角度来看是不可行的）。因此，研究重点已转向超低跨导OTA的设计，该OTA可以与小型电容器耦合以设计用于极低频应用的模拟电路。先前设计lbw- <7m OTA的尝试已经产生了大约15 pA / V的nliriimum跨导值。提出了一种基于碳纳米管场效应晶体管（CNFET）的新型超低跨导放大器。由于常规MOSFET的持续，激进的缩放比例，提出的电路将使CNFET遭受骚扰（例如浮空沟道效应，栅“ e-沟道隧穿，源极-漏极隧穿等”）。此外，如通过仿真验证所显示的，所获得的gm值为2.59 pA / V，该值远远低于根据ottf知识所知的薄弱报道的wbfks。
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