首页>
外国专利>
Method for forming counterdoped semiconductor device comprising first epitaxial layer and second epitaxial layer formed over first epitaxial layer having conductivity type different than second epitaxial layer
Method for forming counterdoped semiconductor device comprising first epitaxial layer and second epitaxial layer formed over first epitaxial layer having conductivity type different than second epitaxial layer
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The semiconductor device includes a third type region including a third conductivity type that is opposite the first conductivity type, the third type region covering the first type region. The semiconductor device includes a fourth type region including a fourth conductivity type that is opposite the second conductivity type, the fourth type region covering the second type region. The semiconductor device includes a channel region extending between the third type region and the fourth type region.
展开▼
