首页> 外国专利> SURFACE TREATMENT METHOD FOR DEPOSITION ACTIVATION OF DIELECTRIC THIN FILM ON GRAPHENE SURFACE TREATED GRAPHENE SUBSTRATE BY THE SAME AND ELECTRONIC DEVICE COMPRISING THE SURFACE TREATED GRAPHENE SUBSTRATE

SURFACE TREATMENT METHOD FOR DEPOSITION ACTIVATION OF DIELECTRIC THIN FILM ON GRAPHENE SURFACE TREATED GRAPHENE SUBSTRATE BY THE SAME AND ELECTRONIC DEVICE COMPRISING THE SURFACE TREATED GRAPHENE SUBSTRATE

机译:包含表面处理过的石墨烯基体的电子装置和表面处理方法,用于在石墨烯表面处理过的石墨烯基体上沉积介电薄膜的活化

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment method for activating a graphene dielectric thin film deposition, a graphene substrate surface-treated by the method, and a graphene substrate surface-treated, The surface treatment method for activating the phase dielectric thin film deposition includes: forming an organic material on the inactive graphene to perform a surface treatment; And forming a dielectric thin film on the organic material.
机译:活化石墨烯介电薄膜沉积的表面处理方法技术领域本发明涉及一种用于活化石墨烯介电薄膜沉积的表面处理方法,通过该方法进行了表面处理的石墨烯基板以及经过表面处理的石墨烯基板。用于激活相电介质薄膜沉积的步骤包括:在惰性石墨烯上形成有机材料以进行表面处理;并在有机材料上形成介电薄膜。

著录项

  • 公开/公告号KR20170114339A

    专利类型

  • 公开/公告日2017-10-16

    原文格式PDF

  • 申请/专利权人 포항공과대학교 산학협력단;

    申请/专利号KR20160040900

  • 发明设计人 백재윤;강세준;신현준;

    申请日2016-04-04

  • 分类号H01L29/16;C01B31/04;C23C14/12;C23C16/455;C25B3;H01L21/02;H01L21/3105;

  • 国家 KR

  • 入库时间 2022-08-21 13:26:27

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