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HIGHLY INTEGRATED NEUROMORPHIC SYSTEM INCLUDING NEURON ELEMENT USING INSULATOR-CONDUCTOR TRANSITION PHENOMENON AND HIGHLY INTEGRATED NEUROMORPHIC CIRCUIT
HIGHLY INTEGRATED NEUROMORPHIC SYSTEM INCLUDING NEURON ELEMENT USING INSULATOR-CONDUCTOR TRANSITION PHENOMENON AND HIGHLY INTEGRATED NEUROMORPHIC CIRCUIT
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机译:高度绝缘的神经形态系统,包括使用绝缘体-导体转变现象和高度集成的神经形态电路的神经元
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摘要
The present invention relates to a highly integrated neuromorphic system including a neuron element using an insulator-conductor transition phenomenon and a highly integrated neuromorphic circuit thereof. The highly integrated neuromorphic system includes a nano-scale synapse element including a resistance-variable layer and a neuron element which is electrically connected to a side of the nano-scale synapse element and generates electrical vibration. The neuron element includes a metal oxide layer having insulator-conductor transition characteristics. The present invention applies insulator-metal transition (IMT) element to the neuron element and uses the nano-scale synapse element with analog resistance-variable characteristics to realize the highly integrated neuromorphic system. Furthermore, the present invention provides the neuromorphic system with enhanced pattern recognition accuracy through coupling the oscillator neuron element and the synapse element with the analog resistance-variable characteristics, thereby being utilized for artificial brain development.;COPYRIGHT KIPO 2017
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