首页> 外国专利> HIGHLY INTEGRATED NEUROMORPHIC SYSTEM INCLUDING NEURON ELEMENT USING INSULATOR-CONDUCTOR TRANSITION PHENOMENON AND HIGHLY INTEGRATED NEUROMORPHIC CIRCUIT

HIGHLY INTEGRATED NEUROMORPHIC SYSTEM INCLUDING NEURON ELEMENT USING INSULATOR-CONDUCTOR TRANSITION PHENOMENON AND HIGHLY INTEGRATED NEUROMORPHIC CIRCUIT

机译:高度绝缘的神经形态系统,包括使用绝缘体-导体转变现象和高度集成的神经形态电路的神经元

摘要

The present invention relates to a highly integrated neuromorphic system including a neuron element using an insulator-conductor transition phenomenon and a highly integrated neuromorphic circuit thereof. The highly integrated neuromorphic system includes a nano-scale synapse element including a resistance-variable layer and a neuron element which is electrically connected to a side of the nano-scale synapse element and generates electrical vibration. The neuron element includes a metal oxide layer having insulator-conductor transition characteristics. The present invention applies insulator-metal transition (IMT) element to the neuron element and uses the nano-scale synapse element with analog resistance-variable characteristics to realize the highly integrated neuromorphic system. Furthermore, the present invention provides the neuromorphic system with enhanced pattern recognition accuracy through coupling the oscillator neuron element and the synapse element with the analog resistance-variable characteristics, thereby being utilized for artificial brain development.;COPYRIGHT KIPO 2017
机译:本发明涉及一种高度集成的神经形态系统,其包括利用绝缘体-导体过渡现象的神经元元件及其高度集成的神经形态电路。高度集成的神经形态系统包括具有电阻可变层的纳米级突触元件和电连接至纳米级突触元件的一侧并产生电振动的神经元元件。神经元元件包括具有绝缘体-导体过渡特性的金属氧化物层。本发明将绝缘体-金属过渡(IMT)元件应用于神经元元件,并使用具有模拟电阻可变特性的纳米级突触元件来实现高度集成的神经形态系统。此外,本发明通过将振荡神经元元件和突触元件与模拟电阻可变特性耦合,从而为神经形态系统提供了增强的模式识别精度,从而被用于人工大脑发育。; COPYRIGHT KIPO 2017

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