首页>
外国专利>
SURFACE TEMPERATURE CALCULATION METHOD AND CONTROL METHOD FOR POLYCRYSTALLINE SILICON ROD METHOD FOR PRODUCTION OF POLYCRYSTALLINE SILICON ROD POLYCRYSTALLINE SILICON ROD AND POLYCRYSTALLINE SILICON INGOT
SURFACE TEMPERATURE CALCULATION METHOD AND CONTROL METHOD FOR POLYCRYSTALLINE SILICON ROD METHOD FOR PRODUCTION OF POLYCRYSTALLINE SILICON ROD POLYCRYSTALLINE SILICON ROD AND POLYCRYSTALLINE SILICON INGOT
展开▼
机译：多晶硅棒的表面温度计算方法和控制方法生产多晶硅棒多晶硅棒和多晶硅锭的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
In the present invention, from the first diffraction chart and the second diffraction chart, the average diffraction intensity ratio (y = (hOne, KOne, LOne) / (H2, K2, L2) Is calculated, and the surface temperature at the time of precipitation is calculated based on the average diffraction intensity ratio. Then, based on the calculated surface temperature of the polycrysine silicon rod and the data of the supply current and the applied voltage at the time of depositing the polycrysine silicon rod, the supply current and the applied voltage at the time of newly producing the polycrysine silicon rod are controlled, Temperature is controlled. By using such a temperature control method, the center temperature T of the polysilicon rod in the precipitation processCAnd surface temperature TS(= TC-TS), It is possible to control the residual stress value in the polysilicon rod.;
展开▼
机译：在本发明中，根据第一衍射图和第二衍射图，平均衍射强度比（y ＝（h One ，K One ，L One ）/（H 2 ，K 2 ，L 2 ）计算，并且沉淀时的表面温度为然后，基于平均衍射强度比，计算出聚晶硅棒的表面温度，并根据沉积时的供给电流和施加电压的数据，计算出供给电流和施加电压。控制新生产的多晶硅晶体棒时的温度，通过这种温度控制方法，可以使沉淀过程中的多晶硅棒的中心温度T C 和表面温度T < Sub> S （= T C -T S ），可以控制多晶硅棒中的残余应力值。
展开▼
