首页> 外国专利> METHOD AND DEVICE FOR PREDICTING RELIABILITY FAILURE RATE OF SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SEMICONDUCTOR INTEGRATED CIRCUIT

METHOD AND DEVICE FOR PREDICTING RELIABILITY FAILURE RATE OF SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SEMICONDUCTOR INTEGRATED CIRCUIT

机译:预测半导体集成电路可靠性故障率的方法和装置以及制造半导体集成电路的方法

摘要

A method for predicting a failure rate of a semiconductor integrated circuit includes receiving a circuit netlist corresponding to circuit defining data, which defines a connection relation, input, output, size, type and operating temperature of each of a plurality of transistors included in the semiconductor integrated circuit. Low-risk transistors having a low-failure probability among the plurality of transistors are detected and filtered out based on the circuit netlist. Failure rates are calculated of respective high-risk transistors other than the low-risk transistors among the plurality of transistors. A total failure rate of the semiconductor integrated circuit is calculated based on the failure rates of the respective high-risk transistors.
机译:一种用于预测半导体集成电路的故障率的方法,包括:接收与电路定义数据相对应的电路网表,该电路定义表定义半导体中包括的多个晶体管中的每个的连接关系,输入,输出,尺寸,类型和工作温度。集成电路。基于电路网表,检测并滤出多个晶体管中具有低故障概率的低风险晶体管。计算多个晶体管中除低风险晶体管之外的各个高风险晶体管的故障率。基于各个高风险晶体管的故障率来计算半导体集成电路的总故障率。

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