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MEMORY ELEMENT BASED vertically aligned carbon nanotubes

机译:基于内存元素的垂直排列的碳纳米管

摘要

The estimated utility model relates to the field of electronics and computer technology, particularly, to an electrically reprogrammable memory devices, and may be used to create an energy efficient nanoscale elements resistive RAM (RRAM) with high speed. Task alleged utility model - increasing the speed of memory cells and a decrease in memory cell resistance switching voltage to reduce power consumption. Technical result is achieved by: forming between a vertically oriented carbon nanotube and the upper electrode gap in order to create a tunnel junction that enhances the performance of the memory cell to a few picoseconds by reducing the transit time of carriers across the tunnel gap, and reduce the contact resistance between the vertically oriented carbon nanotube and the upper electrode, and as a result, reduce the power consumption of the memory cell.
机译:估计的实用新型涉及电子和计算机技术领域,尤其涉及一种电可重编程的存储设备,可用于高速创建高能效的纳米级元件电阻RAM(RRAM)。所谓的任务实用新型-提高存储单元的速度并降低存储单元的电阻切换电压以降低功耗。通过以下方式实现技术成果:在垂直取向的碳纳米管和上部电极间隙之间形成以形成隧道结,从而通过减少载流子穿过隧道间隙的传输时间将存储单元的性能提高到几皮秒。减小垂直取向的碳纳米管与上电极之间的接触电阻,结果,减小了存储单元的功耗。

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