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Semiconductor metal oxide nanostructure with engineered band gap by electrochemically active biofilm and method for preparing the same
Semiconductor metal oxide nanostructure with engineered band gap by electrochemically active biofilm and method for preparing the same
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机译：具有电化学活性生物膜的工程带隙半导体金属氧化物纳米结构及其制备方法
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摘要
The present invention relates to a semiconductor metal oxide (TiO 2 , ZnO, CeO 2, and SnO 2 ) nanostructure fabricated by an electrochemically active biofilm and an electron donor with a bandgap and a method of manufacturing the same. The bandgap fabricated semiconducting metal oxide nanostructure according to the present invention exhibits excellent photocatalytic performance to such an extent that it substantially decomposes the dye within 6 hours under visible light (? 500 nm) irradiation, is cheap, convenient, and environmentally friendly There is an effect of reducing the band gap of the semiconductor metal oxide.
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