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A METHOD OF ION IMPLANTING A SUCCESSION OF SEMICONDUCTOR WAFERS IN A PLASMA REACTOR AND A METHOD OF PLASMA IMMERSION ION IMPLANTING A SUCCESSION OF SEMICONDUCTOR WAFERS IN A PLASMA REACTOR
A METHOD OF ION IMPLANTING A SUCCESSION OF SEMICONDUCTOR WAFERS IN A PLASMA REACTOR AND A METHOD OF PLASMA IMMERSION ION IMPLANTING A SUCCESSION OF SEMICONDUCTOR WAFERS IN A PLASMA REACTOR
plasma infiltrate ion implantation in the process, pre-attributed when the thickness of the seasoning layer during implant chamber increased the seasoning layer thickness hayeoseo of the wafer without loss of clamping electrostatic force (seasoning layer It is increased to allow the injection of a set without replacement of the wafer). This is the first plasma residual electrostatic charge from the seasoning thick layers - what is achieved by a discharge. When supplemented before to increase further the number of each of the wafers that can be processed using the same seasoning layer due to which the wafer is fractionally filled with the (fractionally) a seasoning layer after processing, processing the next wafer seasoning while in the (brief) it can be followed by a plasma discharge. ;
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