首页> 外国专利> MANUFACTURING METHOD OF CATALYST-FREE SUBSTRATE GROWN GRAPHENE, CATALYST-FREE SUBSTRATE GROWN GRAPHENE, AND MANUFACTURING DEVICE

MANUFACTURING METHOD OF CATALYST-FREE SUBSTRATE GROWN GRAPHENE, CATALYST-FREE SUBSTRATE GROWN GRAPHENE, AND MANUFACTURING DEVICE

机译:无催化剂基质生长石墨烯的制造方法,无催化剂基质生长石墨烯的制造装置

摘要

Provided are a manufacturing method of catalyst-free substrate grown graphene, the catalyst-free substrate grown graphene, and a manufacturing device. The manufacturing method of catalyst-free substrate grown graphene of the present invention comprises the following steps: a. arranging a substrate; b. supplying carbon-containing gas and performing inductively coupled plasma-chemical vapor deposition (ICP-CVD); and c. growing graphene on the substrate without having a catalyst layer through van der Waals type heteroepitaxial growth.;COPYRIGHT KIPO 2016
机译:提供了一种无催化剂的衬底生长的石墨烯的制造方法,无催化剂的衬底生长的石墨烯和制造装置。本发明的无催化剂基质生长的石墨烯的制备方法包括以下步骤:a。布置基板; b。供应含碳气体并进行电感耦合等离子体化学气相沉积(ICP-CVD);和c。通过范德华型异质外延生长在没有催化剂层的情况下在基材上生长石墨烯。; COPYRIGHT KIPO 2016

著录项

  • 公开/公告号KR20160101838A

    专利类型

  • 公开/公告日2016-08-26

    原文格式PDF

  • 申请/专利权人 LEE YOUN TEK;

    申请/专利号KR20150024577

  • 发明设计人 LEE YOUN TEKKR;

    申请日2015-02-18

  • 分类号C01B31/04;

  • 国家 KR

  • 入库时间 2022-08-21 14:13:39

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