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首页> 外文期刊>Current Graphene Science >Strong Quantum Confinement Effects in Nanometer Devices with Graphene Directly Grown on Insulator by Catalyst-free Chemical Vapor Deposition | Bentham Science
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Strong Quantum Confinement Effects in Nanometer Devices with Graphene Directly Grown on Insulator by Catalyst-free Chemical Vapor Deposition | Bentham Science

机译：无催化剂化学气相沉积法在绝缘子上直接生长石墨烯的纳米器件中的强量子限制效应边沁科学

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Background: The understanding of electrical properties of defective graphene in nanometerregime has lagged behind.Objective: This report intends to characterize defective but practically useful graphene as nanometerdevices.Method: A-few-layer-thick graphene was directly grown on SiO2 substrate by alcohol-chemical vapordeposition (alcohol-CVD) using ethanol as carbon source and without the use of any catalytic metal.The graphene film was delineated into nanometer structures by electron beam lithography to make thenanoscale devices.Results: The Raman spectra of the graphene sheet on SiO2 shows relatively large D peak, which meansthe graphene is defective and consists of nanograins with an estimated size of 17 nm. Modulation of thegraphene resistance by the gate voltage Vg was studied at room temperature. The film shows only p-typeconduction, with a sheet resistance of 3.7 kΩ / and field-effect mobility calculated to be 44 cm2/Vs.From the temperature dependence of the graphene sheet, it is found that the resistance increases only by7% from room temperature to 10 K, indicating low potential barrier between the domains, even though thegraphene film is as thin as 1.6 nm and defective. From the conductance (Id/Vd) contour plot measured at 10K of these nanodevices, aperiodic Coulomb-blockade feature and transport with a large gap were observed.Conclusion: Correlation among narrowest constriction widths, the variation of the addition energies andtransport gaps in disordered graphene nanostructures is evident. These graphene nanodevices may havepromising application in various nanodevices like single-electron (or single-hole) transistor, singlemoleculetransistor, van-der-Waals stacked nanodevices, etc.
机译：背景：对纳米体系中有缺陷的石墨烯电学性能的了解落后。目的：本报告旨在表征有缺陷但实用的石墨烯作为纳米器件。方法：几层厚的石墨烯通过乙醇直接在SiO2衬底上生长。以乙醇为碳源，不使用任何催化金属的化学气相沉积法（Alcohol-CVD），通过电子束光刻将石墨烯膜刻划为纳米结构，制成纳米尺度的器件。结果：SiO2上石墨烯片的拉曼光谱表明相对较大的D峰，这意味着石墨烯是有缺陷的，由估计尺寸为17 nm的纳米颗粒组成。在室温下研究了栅极电压Vg对石墨烯电阻的调制。该膜仅显示p型导电，薄层电阻为3.7kΩ/，计算出的场效应迁移率为44 cm2 / Vs。从石墨烯片的温度依赖性来看，该电阻仅比室温增加7％如果石墨烯薄膜的厚度薄至1.6 nm且有缺陷，则温度降低至10 K，表明畴之间的势垒低。从这些纳米器件在10K处测得的电导（Id / Vd）等高线图，观察到非周期性库仑阻塞特征和具有大间隙的传输。纳米结构是明显的。这些石墨烯纳米器件可能在各种纳米器件中有希望的应用，例如单电子（或单孔）晶体管，单分子晶体管，范德华堆叠纳米器件等。

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