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COMPOSITION FOR SURFACE MODIFICATION OF INSULATOR, SURFACE MODIFICATION METHOD OF INSULATOR, INSULATOR, AND THIN FILM TRANSISTOR
COMPOSITION FOR SURFACE MODIFICATION OF INSULATOR, SURFACE MODIFICATION METHOD OF INSULATOR, INSULATOR, AND THIN FILM TRANSISTOR
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机译:绝缘子的表面改性的组成,绝缘子的表面改性方法,绝缘子和薄膜晶体管
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摘要
The present invention relates to a composition for surface modification of an insulator, which comprises a compound including a structure unit represented by chemical formula 1 and a structure unit represented by chemical formula 2 at least at one end; a surface modification method of an insulator; a surface modified insulator; and an electronic device comprising the insulator. In chemical formula 1 and 2, the definition of R^a, R^b, R^c, L^1, n, m, and k are the same as defined in the specification.;COPYRIGHT KIPO 2016
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