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COMPOSITION FOR SURFACE MODIFICATION OF INSULATOR, SURFACE MODIFICATION METHOD OF INSULATOR, INSULATOR, AND THIN FILM TRANSISTOR

机译:绝缘子的表面改性的组成,绝缘子的表面改性方法,绝缘子和薄膜晶体管

摘要

The present invention relates to a composition for surface modification of an insulator, which comprises a compound including a structure unit represented by chemical formula 1 and a structure unit represented by chemical formula 2 at least at one end; a surface modification method of an insulator; a surface modified insulator; and an electronic device comprising the insulator. In chemical formula 1 and 2, the definition of R^a, R^b, R^c, L^1, n, m, and k are the same as defined in the specification.;COPYRIGHT KIPO 2016
机译:本发明涉及一种用于绝缘体的表面改性的组合物,该组合物包括至少在一端具有化学式1表示的结构单元和化学式2表示的结构单元的化合物。绝缘体的表面改性方法;表面改性的绝缘体;包括绝缘体的电子设备。在化学式1和2中,R ^ a,R ^ b,R ^ c,L ^ 1,n,m和k的定义与说明书中定义的相同; COPYRIGHT KIPO 2016

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