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COMPOSITION FOR SURFACE MODIFICATION OF INSULATOR, METHOD FOR SURFACE MODIFICATION OF INSULATOR, INSULATOR, AND THIN FILM TRANSISTOR
COMPOSITION FOR SURFACE MODIFICATION OF INSULATOR, METHOD FOR SURFACE MODIFICATION OF INSULATOR, INSULATOR, AND THIN FILM TRANSISTOR
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机译：绝缘体表面改性的组成，绝缘体，绝缘体和薄膜晶体管表面改性方法
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摘要
A composition for surface modification of an insulator comprising a structural unit represented by the following formula (1), and a compound including a structural unit represented by the following formula (2) at at least one terminal, a surface modification method of an insulator, a surface-modified insulator, and the It relates to an electronic device comprising an insulator. [Formula 1] *-(C n F 2n O)-* [Formula 2] (In Formulas 1 and 2, R a , R b , R c , L 1 , n, m, and k are each as defined in the specification.)
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机译：用于表面改性的绝缘体的组合物，其包括由下式（1）表示的结构单元，以及包括在至少一个终端的下述式（2）表示的结构单元的化合物，绝缘体的表面改性方法，表面改性绝缘体，并且其涉及一种电子设备，包括绝缘体。 [式1] * - （C n f 2n o） - * [式2]（在式1和2中，R a ， R b ，R c ，l 1 ，n，m和k各自在规范中定义。）
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