首页> 外国专利> A METHOD FOR MASS PRODUCTION OF SILICON NANOWIRES AND/OR NANOBELTS, AND LITHIUM BATTERIES AND ANODES USING THE SILICON NANOWIRES AND/OR NANOBELTS

A METHOD FOR MASS PRODUCTION OF SILICON NANOWIRES AND/OR NANOBELTS, AND LITHIUM BATTERIES AND ANODES USING THE SILICON NANOWIRES AND/OR NANOBELTS

机译:硅纳米线和/或纳米带的大规模生产方法以及使用硅纳米线和/或纳米带的锂电池和阳极

摘要

This invention provides a method for mass production of silicon nanowires and/or nanobelts. The invented method is a chemical etching process employing an etchant that preferentially etches and removes other phases from a multiphase silicon alloy, over a silicon phase, and allows harvesting of the residual silicon nanowires and/or nanobelts. The silicon alloy comprises, or is treated so as to comprise, one-dimensional and/or two- dimensional silicon nanostructures in the microstructure of the multi-phase silicon alloy prior to etching. When used as anode for secondary lithium batteries, the silicon nanowires or nanobelts produced by the invented method exhibit high storage capacity.
机译:本发明提供了用于大规模生产硅纳米线和/或纳米带的方法。本发明的方法是使用蚀刻剂的化学蚀刻工艺,该蚀刻剂优先于多相硅合金蚀刻并从多相硅合金中除去其他相,并允许收集残留的硅纳米线和/或纳米带。在蚀刻之前,硅合金在多相硅合金的微观结构中包括或被处理为包括一维和/或二维硅纳米结构。当用作二次锂电池的阳极时,通过本发明的方法生产的硅纳米线或纳米带显示出高存储容量。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号