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Methods and structures for preparing single crystal silicon wafers for use as substrates for epitaxial growth of crack-free gallium nitride FILMS and devices
Methods and structures for preparing single crystal silicon wafers for use as substrates for epitaxial growth of crack-free gallium nitride FILMS and devices
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机译：制备用作无裂纹氮化镓FILMS的外延生长衬底的单晶硅晶片的方法和结构及装置
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摘要
This document describes the fabrication and use of ceramic stabilizing layer fabricated right on the product silicon wafer to facilitate its use as a substrate for fabrication of gallium nitride films. A ceramic layer is formed and then attached to a single crystal silicon substrate to form a composite silicon substrate that has coefficient of thermal expansion comparable with GaN. The composite silicon substrates prepared by this invention are uniquely suited for use as growth substrates for crack-free gallium nitride films, benefiting from compressive stresses produced by choosing a ceramic having a desired higher coefficient thermal expansion than those of silicon and gallium nitride.
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