• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>ACS applied materials & interfaces >Thickness-Controlled Wafer-Scale Single-Crystalline MAPbBr(3) Films Epitaxially Grown on CsPbBr3 Substrates by the Droplet-Evaporated Crystallization Method
【24h】

Thickness-Controlled Wafer-Scale Single-Crystalline MAPbBr(3) Films Epitaxially Grown on CsPbBr3 Substrates by the Droplet-Evaporated Crystallization Method

机译：通过液滴蒸发的结晶法在CSPBBR3基材上外延生长的厚度控制的晶片级单晶MAPBBBR（3）薄膜

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The perovskite single-crystalline thin films, which are free of grain boundaries, would be highly desirable in boosting device performance due to their high carrier mobility, low trap density, and large carrier diffusion length. Herein, a facile room-temperature approach to epitaxially grow MAPbBr(3) single-crystalline films on CsPbBr3 substrates by the droplet-evaporated crystallization method is reported. A large-area continuous MAPbBr(3) single-crystal film about 15 x 15 mm(2) in size has been heteroepitaxially grown on CsPbBr3 substrates. The surface morphology, composition, and single crystallinity were characterized by a scanning electron microscope, an energy-dispersive spectrometer, an electron probe microanalyzer, and high-resolution X-ray diffractions, respectively. The thickness of the films could be adjusted from 1 to 18 mu m by varying the concentration of the solution from 10 to 50 wt %. The epitaxial relationship of MAPbBr(3) (010)parallel to CsPbBr3 (010), MAPbBr(3) [101]parallel to CsPbBr3 [200] was authenticated using XRD, pole figure, and TEM. The low defect density of 4.6 x 10(11) cm(-3) and high carrier mobility of 261.94 cm(2) V-1 s(-1) of the MAPbBr(3) film measured by the SCLC method are comparable to those of bulk single crystals. An on/off ratio of similar to 113 was achieved according to current-voltage curves. Our research demonstrates the first large-area single-crystal heterojunction of a hybrid perovskite with an all-inorganic perovskite, which may show unique properties in optoelectronic applications.
机译：由于其高载流子迁移率，低捕集密度和大的载流子扩散长度，温度下，没有晶界的钙钛矿单晶薄膜是非常理想的。这里，报道了通过液滴蒸发的结晶法向外延生长MAPBBR（3）单晶膜外延生长MAPBBBR（3）单晶膜的容易室温方法。大面积连续MAPBBR（3）单晶膜的尺寸约为15×15mm（2），在CSPBBR3基材上杂交生长。通过扫描电子显微镜，能量分散光谱仪，电子探针微分析仪和高分辨率X射线衍射的表面形态，组合物和单晶性。通过将溶液的浓度从10至50wt％改变，膜的厚度可以从1至18μm调节。使用XRD，极值图和TEM进行认证，对CSPBBR3（010），PAPBBR3（010），MAPBBBR（3）[101]的MAPBBBR（3）[101]的外延关系进行了认证。通过SCLC方法测量的MAPBBR（3）膜的261.94cm（2）V-1 s（-1）的低缺陷密度为4.6×10（11）厘米（-3）和高载流子迁移率散装单晶。根据电流电压曲线实现类似于113的开/关比。我们的研究表明，具有全无机钙钛矿的杂交钙钛矿的第一大型单晶异质结，其可在光电应用中显示独特的性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号