Dynamic static random access memory (SRAM) array characterization using an isolated bit-line

• 1. 用于减少在存储器读存取期间的电力假信号的静态随机存取存储器(SRAM)全局位线电路及其相关方法和系统 [P] . 中国专利： CN105765661B . 2018.08.28
• 2. 用于减少在存储器读存取期间的电力假信号的静态随机存取存储器(SRAM)全局位线电路及其相关方法和系统 [P] . 中国专利： CN105765661A . 2016-07-13
• 3. DYNAMIC STATIC RANDOM ACCESS MEMORY SRAM ARRAY CHARACTERIZATION [P] . 韩国专利： KR102165373B1 . 2020-10-14

  机译： 动态静态随机存取存储器SRAM阵列特性

• 4. DYNAMIC STATIC RANDOM ACCESS MEMORY (SRAM) ARRAY CHARACTERIZATION [P] . 韩国专利： KR20150024787A . 2015-03-09

  机译： 动态静态随机存取存储器（SRAM）阵列特性

• 5. DYNAMIC STATIC RANDOM ACCESS MEMORY (SRAM) ARRAY CHARACTERIZATION [P] . 美国专利： US2015063009A1 . 2015-03-05

  机译： 动态静态随机存取存储器（SRAM）阵列特性

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