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Layout content analysis for source mask optimization acceleration
Layout content analysis for source mask optimization acceleration
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机译：布局内容分析可加快源掩模优化
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摘要
The invention provides for the acceleration of a source mask optimization process. In some implementations, a layout design is analyzed by a pattern matching process, wherein sections of the layout design having similar patterns are identified and consolidated into pattern groups. Subsequently, sections of the layout design corresponding to the pattern groups may be analyzed to determine their compatibility with the optical lithographic process, and the compatibility of these sections may be classified based upon a “cost function.” With further implementations, the analyzed sections may be classified as printable or difficult to print, depending upon the particular lithographic system. The compatibility of various sections of a layout design may then be utilized to optimize the layout design during a lithographic friendly design process. For example, during the design phase, sections categorized as difficult to print may be flagged for further optimization, processing, or redesign. In further implementations, the difficult-to-print sections may be subjected to a source mask optimization process. Subsequently, the entire layout design may receive a conventional resolution enhancement treatment using the optimized source.
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